DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS

Double-heterostructure diode lasers emitting at 3 mum have exhibited p ulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteris tic temperature is 35 K at low temperatures and 28 K above 120 K.