GAAS QUANTUM DOTS WITH LATERAL DIMENSION OF 25 NM FABRICATED BY SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH

We report on in situ fabrication and the photoluminescence spectra of pyramid-shaped GaAs dot structures grown on (100) GaAs substrates usin g selective epitaxial growth by metalorganic chemical vapor deposition . The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In a ddition, energy change of magnetophotoluminescence spectra demonstrate s the enhancement of exciton binding energy due to lateral confinement .