HIGH-FREQUENCY CAPACITANCES IN RESONANT INTERBAND TUNNELING DIODES

Authors
FOBELETS K VOUNCKX R GENOE J BORGHS G GRONQVIST H LUNDGREN L
Citation
K. Fobelets et al., HIGH-FREQUENCY CAPACITANCES IN RESONANT INTERBAND TUNNELING DIODES, Applied physics letters, 64(19), 1994, pp. 2523-2525
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
19
Year of publication
1994
Pages
2523 - 2525
Database
ISI
SICI code
0003-6951(1994)64:19<2523:HCIRIT>2.0.ZU;2-5
Abstract
The junction capacitance in resonant interband tunneling diodes is det ermined using microwave impedance measurements from 40 MHz to 62 GHz a nd network parameter extraction. The shape of the capacitance in the p ositive differential resistance region is totally different from the r esonant tunneling diode. The difference can be explained by the intrin sic transport process of carriers in a resonant interband tunneling di ode, what is manifested in the conductance characteristic of the devic e.