IMPROVED THERMAL-CONDUCTIVITY IN ISOTOPICALLY ENRICHED CHEMICAL-VAPOR-DEPOSITED DIAMOND

Citation
Je. Graebner et al., IMPROVED THERMAL-CONDUCTIVITY IN ISOTOPICALLY ENRICHED CHEMICAL-VAPOR-DEPOSITED DIAMOND, Applied physics letters, 64(19), 1994, pp. 2549-2551
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
19
Year of publication
1994
Pages
2549 - 2551
Database
ISI
SICI code
0003-6951(1994)64:19<2549:ITIIEC>2.0.ZU;2-N
Abstract
The thermal conductivity kappa of an isotopically enriched (0.055% C-1 3) polycrystalline diamond plate made by chemical vapor deposition (CV D) has been measured for heat flowing in a direction either parallel ( kappa(parallel-to)) or perpendicular (kappa(perpendicular-to)) to the plane of the plate. The room-temperature conductivities kappa(parallel -to)=21.8 and kappa(perpendicular-to) = 26 W cm-1 K-1) are higher than for any CVD diamond previously reported, and the kappa(perpendicular- to) value is higher than the best gem-quality single crystal with the natural abundance (1.1%) of C-13. Analysis of the temperature dependen ce of kappa(parallel-to) reveals that the point-defect scattering of p honons is in fact significantly lower than expected for the natural ab undance of C-13 and that it is responsible for the improved conductivi ty. The observed anisotropy kappa(parallel-to)/kappa(perpendicular-to) = 0.84 at room temperature is associated with the anisotropic grain s tructure.