CHARACTERIZATION OF THE TITANIUM-SILICON 2 SI INTERFACE IN TITANIUM DISILICIDE FILMS ON SILICON, FORMED BY DEPOSITION OF ALTERNATE TITANIUM-SILICON LAYERS AND ANNEALING/

Interfaces of titanium disilicide films formed on silicon by alternate titanium-silicon electron gun deposition and annealing were character ized by current-voltage measurements on specially prepared Schottky di odes at both room and low temperatures, down to liquid nitrogen. The i nfluence of the bilayer silicon/titanium thickness ratio on the interf ace properties was examined and the optimum value for good quality Sch ottky diodes with smooth interfaces and low series resistance was dete rmined. The value of the barrier height derived from the silicide form ed by multilayer deposition with the optimum value of the ratio silico n/titanium does not differ significantly from that of the silicide for med by deposition of a single layer and the same applies also to their temperature dependence, although the interfaces of these silicides ap pear different, deemphasizing so the role of the interface on the Scho ttky barrier formation. The present results are complimentary to previ ous measurements by scanning and transmission electron microscopy, x-r ay diffraction, and Rutherford backscattering.