SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO P-TYPE ALPHA 6H-SIC

A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier co ntact formation to p-type Si-face (0001) and C-face (0001BAR) 6H-SiC b y using x-ray photoemission spectroscopy is reported. The Schottky bar rier height phi(B) ranges from 1.17 to 2.56 eV and is influenced by th e contact metal work function and the 6H-SiC crystal face. A compariso n with prior phi(B) values for n-type material indicates that for SiMi larly prepared metal/6H-SiC interfaces (including those which have bee n annealed) phi(Bp) and phi(Bn) sum to the 6H-SiC band gap.