HIGHLY PREFERRED AL[111] FILMS FOR HIGH-FREQUENCY SURFACE-ACOUSTIC-WAVE DEVICES
Citation
A. Kamijo et T. Mitsuzuka, HIGHLY PREFERRED AL[111] FILMS FOR HIGH-FREQUENCY SURFACE-ACOUSTIC-WAVE DEVICES, NEC research & development, 35(2), 1994, pp. 156-164
Categorie Soggetti
Engineering, Eletrical & Electronic
SICI code
0547-051X(1994)35:2<156:HPAFFH>2.0.ZU;2-H
Abstract
Highly preferred AI[III] films suitable for high-frequency Surface Aco
ustic Wave (SAW) devices have been deposited on an ultrathin metal und
erlayer by means of an ion beam sputtering technique. The [111] textur
e was obtained for Al underlayered with ultrathin metal films such as
Y, Ti, V, Cr, Co, Ni and Cu, on a substrate that is being used for SAW
devices. The region in which the texturing occurred was dependent on
the metal element and the thickness of the underlayers. The [111] text
ured films exhibited a very smooth film surface. The reason why the [1
11] texturing took place within the limited thickness range is discuss
ed from the viewpoints of phenomenological wetting and a rotational sy
mmetry mismatch between Al and metal underlayer texture.