MEASUREMENT OF CARRIER ESCAPE RATES, EXCITON SATURATION INTENSITY, AND SATURATION DENSITY IN ELECTRICALLY BIASED MULTIPLE-QUANTUM-WELL MODULATORS

In this paper, we detail the results of exciton saturation intensity m easurements on strained InAsP/InP and InGaAs/GaAs multiple quantum wel l modulators designed for 1 mum operation and under electrical bias as is required for device operation. Carrier escape times from the quant um well were also measured for both electrons and holes. These measure ments allow the first experimental determination of the saturation den sity of the material under electrical bias. This density can also be c alculated using a theoretical model proposed by Schmitt-Rink, et al., [20]. The experimentally measured density is in good agreement with th is theoretical model.