M. Fukuda et al., DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS ALGAASLASERS UNDER HIGH-POWER OPERATION/, IEEE journal of quantum electronics, 30(2), 1994, pp. 471-476
The degradation behavior of 0.98-mum strained quantum well (QW) InGaAs
/AlGaAs lasers with facet coating films is systematically clarified at
high-power operations of more than 100 mW/facet. The degradation is m
ainly caused by the instability of the interface between the laser mat
erial (facet) and the antireflecting (AR) coating film. This phenomeno
n is associated with a high rate of facet oxidation and generation of
instantaneous catastrophic optical damage (COD) at a relatively low op
tical output power in lasers without facet coating films. Throughout t
he clarification of those phenomena, the main reliability problem in 0
.98-mum strained QW lasers under high output power operation is clarif
ied.