DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS ALGAASLASERS UNDER HIGH-POWER OPERATION/

Citation
M. Fukuda et al., DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS ALGAASLASERS UNDER HIGH-POWER OPERATION/, IEEE journal of quantum electronics, 30(2), 1994, pp. 471-476
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
2
Year of publication
1994
Pages
471 - 476
Database
ISI
SICI code
0018-9197(1994)30:2<471:DBO0SI>2.0.ZU;2-#
Abstract
The degradation behavior of 0.98-mum strained quantum well (QW) InGaAs /AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is m ainly caused by the instability of the interface between the laser mat erial (facet) and the antireflecting (AR) coating film. This phenomeno n is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low op tical output power in lasers without facet coating films. Throughout t he clarification of those phenomena, the main reliability problem in 0 .98-mum strained QW lasers under high output power operation is clarif ied.