Pja. Thijs et al., PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 477-499
The progress in long-wavelength compressively and tensile-strained InG
aAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. B
y the application of grown-in strain, the device performance is consid
erably improved such that conventional bulk and unstrained quantum-wel
l active-layer devices are outperformed, while a high reliability is m
aintained.