PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS

Authors
THIJS PJA TIEMEIJER LF BINSMA JJM VANDONGEN T
Citation
Pja. Thijs et al., PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 477-499
Citations number
162
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
30
Issue
2
Year of publication
1994
Pages
477 - 499
Database
ISI
SICI code
0018-9197(1994)30:2<477:PILSIQ>2.0.ZU;2-D
Abstract
The progress in long-wavelength compressively and tensile-strained InG aAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. B y the application of grown-in strain, the device performance is consid erably improved such that conventional bulk and unstrained quantum-wel l active-layer devices are outperformed, while a high reliability is m aintained.