LINEWIDTH ENHANCEMENT FACTOR IN INGAASP INP MODULATION-DOPED STRAINEDMULTIPLE-QUANTUM-WELL LASERS/

Citation
F. Kano et al., LINEWIDTH ENHANCEMENT FACTOR IN INGAASP INP MODULATION-DOPED STRAINEDMULTIPLE-QUANTUM-WELL LASERS/, IEEE journal of quantum electronics, 30(2), 1994, pp. 533-537
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
2
Year of publication
1994
Pages
533 - 537
Database
ISI
SICI code
0018-9197(1994)30:2<533:LEFIII>2.0.ZU;2-U
Abstract
Reduction of the linewidth enhancement factor alpha is studied in InP- based strained multiple-quantum-well (MQW) lasers. Theoretical analysi s shows that the alpha-parameter is greatly reduced in modulation-dope d strained MQW lasers and may be zero while keeping positive gain. The experimental evaluation exhibits a very small alpha-parameter of arou nd 1 in InGaAsP/InP modulation-doped strained MQW lasers. As a result of the small alpha-parameter, the linewidth-power product is effective ly reduced in 1.5-mum DFB lasers with the modulation-doped strained MQ W structure. The narrow spectral linewidth around 100 kHz were also ob tained reproducibly in 1.5-mum modulation-doped strained MQW DFB laser s.