EFFECTS OF WELL NUMBER IN 1.3-MU-M GAINASP INP GRIN-SCH STRAINED-LAYER QUANTUM-WELL LASERS/

Effects of well number in 1.3-mum GaInAsP/InP GRIN-SCH compressively s trained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low th reshold current operation at high temperature. As a result, we find th at the optimum well number that gives the minimum threshold current in creases with operating temperature and it was limited to the degradati on of crystal quality of the quantum wells due to the critical thickne ss. A very high CW operating temperature of 170-degrees-C was obtained . A very high output power of over 300 mW was also achieved.