STRAINED GAXIN1-XP (ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES/

Citation
Dp. Bour et al., STRAINED GAXIN1-XP (ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES/, IEEE journal of quantum electronics, 30(2), 1994, pp. 593-607
Citations number
54
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
2
Year of publication
1994
Pages
593 - 607
Database
ISI
SICI code
0018-9197(1994)30:2<593:SG(HAQ>2.0.ZU;2-2
Abstract
The properties of (AlGa)0.5In0.5P, strained GaxIn1-xP/(AlGa)0.5In0.5P heterostructures, and single quantum well (QW) laser diodes with Al0.5 In0.5P cladding layers, prepared by low pressure organometallic vapor phase epitaxy, are described. The influence of biaxial strain upon the relative positions of the valence band edges are examined by analyzin g the polarized spontaneous emission. Laser diodes with wavelength 620 < lambda < 690 nm are also fabricated, using active regions of biaxia lly strained GaInP or AlGaInP. At longer wavelengths, threshold curren t densities under 200 A/cm2 and efficiencies greater than 80% result f rom a biaxially-compressed GaInP QW active region. Short wavelength Al GaInP laser performance is hindered by the poor electron confinement a fforded by AlGaInP heterostructures. Despite the electron leakage prob lem, good 630-nm band performance, and extension into the 620-nm band, is achieved with strained, single QW active regions.