Dp. Bour et al., STRAINED GAXIN1-XP (ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES/, IEEE journal of quantum electronics, 30(2), 1994, pp. 593-607
The properties of (AlGa)0.5In0.5P, strained GaxIn1-xP/(AlGa)0.5In0.5P
heterostructures, and single quantum well (QW) laser diodes with Al0.5
In0.5P cladding layers, prepared by low pressure organometallic vapor
phase epitaxy, are described. The influence of biaxial strain upon the
relative positions of the valence band edges are examined by analyzin
g the polarized spontaneous emission. Laser diodes with wavelength 620
< lambda < 690 nm are also fabricated, using active regions of biaxia
lly strained GaInP or AlGaInP. At longer wavelengths, threshold curren
t densities under 200 A/cm2 and efficiencies greater than 80% result f
rom a biaxially-compressed GaInP QW active region. Short wavelength Al
GaInP laser performance is hindered by the poor electron confinement a
fforded by AlGaInP heterostructures. Despite the electron leakage prob
lem, good 630-nm band performance, and extension into the 620-nm band,
is achieved with strained, single QW active regions.