ACCURATE EVALUATION TECHNIQUES OF INTERSTITIAL OXYGEN CONCENTRATIONS IN MEDIUM-RESISTIVITY SI CRYSTALS

Accurate evaluation methods for interstitial oxygen concentrations ([O (i)]) by infrared absorptiometry at 1107 cm-1 are investigated for med ium resistivity Si crystals with carrier concentrations betwee 3 x 10( 15) and 5 x 10(16) cm-3, which correspond to resistivities between 5 a nd 0.5 OMEGA-cm for p-type crystals. Difficulty of accurate [O(i)] mea surements for these crystals originates from the strong dependence of the internal multiple reflection effect inside the sample crystal on t he free-carrier absorption intensity. Neglect of this effect introduce s an error as large as 1 ppma for a p-type approximately 1 OMEGA-cm cr ystal. Two reliable methods to overcome this difficulty are presented. One is to eliminate the multiple reflection effect physically by appl ying the p-polarized light incident on the sample surface at Brewster' s angle. The other is to eliminate the effect mathematically by a mult iple reflection correction carefully taking account of the free-carrie r absorption. Results obtained by the two reliable infrared absorption methods are consistent with a result by a high precision oxygen evalu ation using secondary ion mass spectrometry.