SHALLOW N-PHASE DOPING( JUNCTIONS IN SILICON BY ARSENIC GAS)

Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine ( TBA). A 60 s gas-phase diffusion at 1100-degrees-C using 3.6% arsine i n helium at 760 Torr formed 150 nm junctions with a measured sheet res istance of 100 OMEGA/square. Shallow junctions were also formed with a 12 min diffusion at 900-degrees-C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon s urface greater than 1 x 10(20) atm/cm3 and a sheet resistance of 244 O MEGA/square. In addition, TEM cross sections show no process-induced d amage at the junction for gas-phase doping.