THE SPONTANEOUS NERNST-ETTINGSHAUSEN AND HALL-EFFECTS IN CO-TI AMORPHOUS THIN-FILMS

The temperature dependence of the spontaneous Hall Rs(T) and Nernst-Et tingshausen Q(S)(T) coefficients of amorphous Co-Ti thin films has bee n studied. It was found that the spontaneous Hall effect was due to si de-jump mechanism and the Rs(T) dependence arose from the magnetic and phonon contribution to the resistivity. The spontaneous Nernst-Etting shausen coefficient is discused applying the Kondorskii and Berger for mula Q = - T(alpha +betarho). An attempt to find a suitable explanatio n of our Q(S)(T) results reveals that the scattering mechanism respons ible for the observed Q(S)(T) behaviour are mainly the phonon and spin -disorder scattering although the latter plays an important role.