BRUSH PLATED CDSE FILMS AND THEIR PHOTOELECTROCHEMICAL CHARACTERISTICS

The brush plating technique has been employed for the first time to ob tain CdSe films on Ti and conducting glass substrates. These films hav e been annealed in an argon atmosphere and their structural, optical a nd photoelectrochemical properties are discussed. The power conversion efficiency has been found to be 7.43% under an illumination of 80 mW cm-2. A peak quantum efficiency of 0.64 is obtained for an incident wa velength of 720 nm. Donor concentration of 3.42 x 10(17) cm-3, electro n mobility of 3 cm2 V-1 s-1 and minority carrier diffusion length of 0 .013 mum have been obtained.