THERMOELECTRICALLY COOLED ARSENIC DIFFUSED MEDIUM-WAVELENGTH INFRAREDHGCDTE PHOTODIODES

Authors
CIUPA R ROGALSKI A RUTKOWSKI J PIOTROWSKI J
Citation
R. Ciupa et al., THERMOELECTRICALLY COOLED ARSENIC DIFFUSED MEDIUM-WAVELENGTH INFRAREDHGCDTE PHOTODIODES, Optical engineering, 33(5), 1994, pp. 1434-1439
Citations number
24
Categorie Soggetti
Optics
Journal title
Optical engineering → ACNP
ISSN journal
00913286
Volume
33
Issue
5
Year of publication
1994
Pages
1434 - 1439
Database
ISI
SICI code
0091-3286(1994)33:5<1434:TCADMI>2.0.ZU;2-G
Abstract
The performance of thermoelectrically cooled p+-n medium-wavelength in frared (MWIR) HgCdTe photodiodes is analyzed. The effect of doping pro file on the photodiode parameters (R0A product, quantum efficiency) is solved by forward-condition steady-state analysis. Results of calcula tions are compared with experimental data. The p+-n homojunctions are formed by arsenic diffusion in HgCdTe epilayers. MWIR photodiodes effe ctively operate at elevated temperatures around 200 K and exhibit back ground-limited photodetection (BLIP) performance when monolithic optic al immersion is used.