The performance of thermoelectrically cooled p+-n medium-wavelength in
frared (MWIR) HgCdTe photodiodes is analyzed. The effect of doping pro
file on the photodiode parameters (R0A product, quantum efficiency) is
solved by forward-condition steady-state analysis. Results of calcula
tions are compared with experimental data. The p+-n homojunctions are
formed by arsenic diffusion in HgCdTe epilayers. MWIR photodiodes effe
ctively operate at elevated temperatures around 200 K and exhibit back
ground-limited photodetection (BLIP) performance when monolithic optic
al immersion is used.