M. Fleischer et al., EFFECT OF THE SENSOR STRUCTURE ON THE STABILITY OF GA(2)O(3) SENSORS FOR REDUCING GASES, Sensors and actuators. B, Chemical, 18(1-3), 1994, pp. 119-124
Gas sensors based on semiconducting polycrystalline Ga2O3 thin films c
an be used either for sensing oxygen (T greater-than-or-equal-to 900-d
egrees-C) or reducing gases (T < 900-degrees-C), depending on the oper
ating temperature. Whereas the stability of these sensors under purely
oxidizing conditions has been proven, up to now there have been no sy
stematic investigations on their material stability in the presence of
reducing gases. The following study deals with sensor films on Al2O3
and BeO substrates; the sensors are equipped with interdigital electro
des made of sputtered platinum or gold thin films. Tests were carried
out at the operating conditions of the Ga2O3 hydrogen sensor (600-degr
ees-C, 1% H-2 in synthetic air), with the gas atmosphere remaining the
same but at elevated temperatures, and also under purely reducing con
ditions (5% H-2 in N2). Ga2O3 sensor films on a BeO substrate are stab
le under the operating conditions of hydrogen sensors, namely a temper
ature of 600-degrees-C (H-2 in air), even under sustained exposure to
hydrogen. No degradations have been found due to changes in the Ga2O3
film even at operating temperatures up to 900-degrees-C. Generally spe
aking, films on Al2O3 substrate have poorer stability characteristics.
In using gold electrodes, there is a limit with respect to thermal st
ressability of gold contacts at about 800-degrees-C. When used in a pu
rely reducing atmosphere, these Ga2O3 thin film sensors are stable so
long as the oxygen-defect equilibrium of the Ga2O3 crystal lattice is
frozen (T < 700-degrees-C). Upon starting bulk-defect diffusion, oxyge
n depletion occurs in the lattice, which in the case of sensors on a B
eO substrate leads to an increase in conductivity that is reversible b
y subsequent oxidation, while in the case of sensors on Al2O3 it leads
to the destruction of the film. At the usual operating temperatures t
herefore, H-2 sensors can be operated in both oxidizing and reducing a
tmospheres.