INFLUENCE OF THE SEMICONDUCTOR LASER-DIODE PARAMETERS ON RADIATION FOCUSING IN OPTICAL DATA-RECORDING EQUIPMENT

Authors
BATAI LE ZVERKOV MV KONYAEV VP KUZMIN AN RYABTSEV GI YARZHEMKOVSKII VD
Citation
Le. Batai et al., INFLUENCE OF THE SEMICONDUCTOR LASER-DIODE PARAMETERS ON RADIATION FOCUSING IN OPTICAL DATA-RECORDING EQUIPMENT, Journal of optical technology, 61(4), 1994, pp. 312-314
Citations number
NO
Categorie Soggetti
Optics
Journal title
Journal of optical technology → ACNP
ISSN journal
10709762
Volume
61
Issue
4
Year of publication
1994
Pages
312 - 314
Database
ISI
SICI code
1070-9762(1994)61:4<312:IOTSLP>2.0.ZU;2-V
Abstract
This paper discussed the influence of the parameters of semiconductor lasers (astigmatic difference, lasing wavelength, and mesa width) on t he spot diameter of the focused radiation in WORM (write-once-read-man y) optical recording equipment with an entrance aperture of 0.04 and a n exit aperture of 0.55.