GENERAL RELATION BETWEEN REFRACTIVE-INDEX AND ENERGY-GAP IN SEMICONDUCTORS

Authors
HERVE P VANDAMME LKJ
Citation
P. Herve et Lkj. Vandamme, GENERAL RELATION BETWEEN REFRACTIVE-INDEX AND ENERGY-GAP IN SEMICONDUCTORS, Infrared physics & technology, 35(4), 1994, pp. 609-615
Citations number
14
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Infrared physics & technology → ACNP
ISSN journal
13504495
Volume
35
Issue
4
Year of publication
1994
Pages
609 - 615
Database
ISI
SICI code
1350-4495(1994)35:4<609:GRBRAE>2.0.ZU;2-C
Abstract
A review is given of existing relations and rules of thumb between ref ractive index and energy pp in semiconductors. An error deviation was calculated on more than one hundred materials. With only one set of fi tting parameters, our model n2 = 1 + [A/(E(g) + B)]2, based on the cla ssical oscillator theory, gives good fit except for IV-VI materials li ke PbS, PbSe, PbTe. The constant A was found to have the same value as the hydrogen ionization energy i.e. 13.6 eV and B = 3.4 eV.