SIMULATION OF DOPANT ZONE-LEVELING FOR VARIABLE DISTRIBUTION COEFFICIENT IN KCL-EUCL2 SYSTEM

Authors
CYWINSKI R DAMM JZ
Citation
R. Cywinski et Jz. Damm, SIMULATION OF DOPANT ZONE-LEVELING FOR VARIABLE DISTRIBUTION COEFFICIENT IN KCL-EUCL2 SYSTEM, Crystal research and technology, 29(3), 1994, pp. 357-361
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
3
Year of publication
1994
Pages
357 - 361
Database
ISI
SICI code
0232-1300(1994)29:3<357:SODZFV>2.0.ZU;2-X
Abstract
Experimental data of Eu2+ distribution in EuCl2-doped KCl ingots are a nalyzed. After setting the relation between variable distribution coef ficient and the dopant concentration in the melt, the simulation of th e dopant zone-leveling for various molten zone widths is performed. It is shown that owing to the decrease of the distribution coefficient c aused by increasing dopant concentration in the molten zone, the numbe r of the zone passes after which the dopant concentration levees off u ndergoes significant reduction.