Photochemical diodes were prepared using a thin film of TiO2 made from
titanium isopropoxide by a sol-gel method. A half part of a conductiv
e SnO2 film plated on a quartz plate was coated with the TiO2 film, an
d the other parts of the SnO2 substrate were coated with a thin Pt fil
m. The photochemical diode thus prepared shows photocatalytic activity
for hydrogen evolution from aqueous ethanol solutions containing NaOH
or HClO4. No other products are detected in the gas phase. Hydrogen e
volution from the Pt part is definitely observed, indicating electron
transfer from the TiO2 film to the Pt film through the SnO2 film. Anot
her type of photochemical diode, the TiO2 film coated on a Pt plate, i
s found to show higher activity than the TiO2/SnO2/Pt device for the h
ydrogen photo-evolution without any support electrolyte. Hydrogen evol
ution on this device, however, occurs on the TiO2 side but not on the
Pt side. These results are discussed in terms of a photo-electrochemic
al mechanism at semiconductor surfaces.