LOW DRIVE VOLTAGE GAAS QUANTUM-WELL ELECTROABSORPTION MODULATORS OBTAINED WITH A DISPLACED JUNCTION

Authors
CROOK AC COCKERILL TM FORBES DV HERZINGER CM DETEMPLE TA COLEMAN JJ
Citation
Ac. Crook et al., LOW DRIVE VOLTAGE GAAS QUANTUM-WELL ELECTROABSORPTION MODULATORS OBTAINED WITH A DISPLACED JUNCTION, IEEE photonics technology letters, 6(5), 1994, pp. 619-622
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
5
Year of publication
1994
Pages
619 - 622
Database
ISI
SICI code
1041-1135(1994)6:5<619:LDVGQE>2.0.ZU;2-9
Abstract
A reduction in the drive voltage of an electroabsorption waveguide mod ulator based on an AlGaAs/GaAs quantum well laser heterostructure is d emonstrated by a simple change in the position of the p-n junction rel ative to the quantum well. This is accomplished by adjusting the dopin g profile and does not significantly alter the operation of the struct ure as a laser or degrade other aspects of device performance such as reverse breakdown voltage and series resistance. A contrast ratio of 2 5 dB (5 dB/100 mum) was obtained with a bias change of -2 V.