GROWTH OF 2H-SIC ON 6H-SIC BY PULSED-LASER ABLATION

A 2H-SiC thin film has been grown on a 6H-SiC substrate by laser ablat ion using an excimer laser. The deposition of 2H-SiC film occurred in a high vacuum system (almost-equal-to 10(-6) Torr) with the substrate temperature near 1200-degrees-C. Plan-view and cross-sectional transmi ssion electron microscopy (TEM) were used to measure the lattice param eters and to identify the polytype. Cross-sectional TEM images clearly show the symmetry of the film as c-axis oriented 2H-SiC containing co lumnar grains with an average diameter of 20 nm and a length of 100 nm .