SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/

Citation
Nv. Nguyen et al., SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/, Applied physics letters, 64(20), 1994, pp. 2688-2690
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
20
Year of publication
1994
Pages
2688 - 2690
Database
ISI
SICI code
0003-6951(1994)64:20<2688:SEDOTP>2.0.ZU;2-5
Abstract
The existence of both the strain and microroughness at the interface o f thermally grown SiO2 films on Si was ascertained unambiguously for t he first time by high accuracy spectroscopic ellipsometry. The dielect ric function of the interface was determined by a comprehensive data a nalysis procedure. By carefully examining the dielectric function obta ined by our model, the strain was seen to cause a red shift of 0.042 e V of the interband critical point E1 compared with the bulk silicon va lue. The thickness of the interface region was found to be 2.2 nm of w hich a significant part is due to the strain.