GROWTH OF SINGLE-CRYSTAL GE FILMS ON GAAS AND INGAP AND HIGHLY ORIENTED AU FILMS ON GE

Single crystal germanium films were deposited on (100) GaAs and InGaP substrates, and highly oriented gold films were deposited on the germa nium films by ultrahigh vacuum E-beam evaporation. They were character ized by double crystal x-ray diffraction (DXRD), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The germanium film grew epitaxially with a smooth, abrupt interface, a nd the highly oriented gold film formed a smooth interface with the ge rmanium and had a (100)Au parallel-to (100)Ge and (001)Au parallel-to [011]Ge or [001]Au parallel-to [0-1 1]Ge orientation relationship. Lar ge grains with one or the other orientation relationship could be dist inguished in the SEM. TEM micrographs show that the grains have a peri odic dislocation pattern indicative of heteroepitaxy, and the grain bo undaries appear to have a low energy. No contamination was detected in the gold film away from the interface with the germanium, and there w as significant channeling of the RBS beam when it was normal to the go ld film.