IMPROVED EFFICIENCY OF CRYSTALLINE SILICON SOLAR-CELLS DUE TO HE+ IMPLANTATION

Authors
BRUNS J SEIFERT W WAWER P WINNICKE H BRAUNIG D WAGEMANN HG
Citation
J. Bruns et al., IMPROVED EFFICIENCY OF CRYSTALLINE SILICON SOLAR-CELLS DUE TO HE+ IMPLANTATION, Applied physics letters, 64(20), 1994, pp. 2700-2702
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
20
Year of publication
1994
Pages
2700 - 2702
Database
ISI
SICI code
0003-6951(1994)64:20<2700:IEOCSS>2.0.ZU;2-Q
Abstract
The influence of He+ implantation on the properties of crystalline sil icon solar cells has been investigated. The implantation of 550 keV He + ions into the masked surface of solar cells was used to form a two-d imensional defect layer inside the cell space-charge region. For suita ble implantation doses it is possible to increase the photocurrent wit hout degenerating the values for open circuit voltage thus resulting i n an improved efficiency of the cells.