HETEROEPITAXIAL GROWTH OF TIN-DOPED INDIUM OXIDE-FILMS ON SINGLE-CRYSTALLINE YTTRIA-STABILIZED ZIRCONIA SUBSTRATES

Authors
KAMEI M YAGAMI T TAKAKI S SHIGESATO Y
Citation
M. Kamei et al., HETEROEPITAXIAL GROWTH OF TIN-DOPED INDIUM OXIDE-FILMS ON SINGLE-CRYSTALLINE YTTRIA-STABILIZED ZIRCONIA SUBSTRATES, Applied physics letters, 64(20), 1994, pp. 2712-2714
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
20
Year of publication
1994
Pages
2712 - 2714
Database
ISI
SICI code
0003-6951(1994)64:20<2712:HGOTIO>2.0.ZU;2-O
Abstract
Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achiev ed for the first time by using single crystalline yttria stabilized zi rconia (YSZ) as substrates. The epitaxial relationship between ITO fil m and YSZ substrate was ITO[100] parallel-to YSZ[100]. By comparing th e electrical properties of this epitaxial ITO film with that of a rand omly oriented polycrystalline ITO film grown on a glass substrate, nei ther the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in IT O films.