RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION

(100) Si samples, amorphized by implanting with 50, 70 and 100 keV Ge- 74+ ions at doses of the order of 1 X 10(16) cm-2, have been recrystal lized by rapid thermal annealing (RTA) with different temperature-time (T-t) combinations. Monte Carlo calculations using TRIM-91 computer p rogram were performed to estimate the depth of amorphized regions, imp lanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implant ed layers can be reached with proper rapid thermal processing. An empi rical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by O-16(alpha,alpha)O-16 RBS resonance channeling and SIMS.