ISOLATION OF GAAS IS CREATED ON MOS-HYDRI DE EPITAXIAL STRUCTURES USING PROTON-BOMBARDMENT

Authors
KOZLOVSKII VV KOZLOVSKAYA IA LIVSHITS YA MARAKHONOV VM
Citation
Vv. Kozlovskii et al., ISOLATION OF GAAS IS CREATED ON MOS-HYDRI DE EPITAXIAL STRUCTURES USING PROTON-BOMBARDMENT, Pis'ma v Zurnal tehniceskoj fiziki, 20(2), 1994, pp. 5-8
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
20
Issue
2
Year of publication
1994
Pages
5 - 8
Database
ISI
SICI code
0320-0116(1994)20:2<5:IOGICO>2.0.ZU;2-Y