LOCALIZATION OF TRANSVERSE OPTICAL PHONONS OF GAAS IN GAAS ALXGA1-XASPERIODIC STRUCTURES WITH PAIRED QUANTUM-WELLS

Authors
MILEKHIN AG PUSEP YA PREOBRAZHENSKII VV SEMYAGIN BR LUBYSHEV DI
Citation
Ag. Milekhin et al., LOCALIZATION OF TRANSVERSE OPTICAL PHONONS OF GAAS IN GAAS ALXGA1-XASPERIODIC STRUCTURES WITH PAIRED QUANTUM-WELLS, JETP letters, 59(7), 1994, pp. 493-496
Citations number
6
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
59
Issue
7
Year of publication
1994
Pages
493 - 496
Database
ISI
SICI code
0021-3640(1994)59:7<493:LOTOPO>2.0.ZU;2-Z
Abstract
A localization of transverse optical phonons in GaAs layers separated by ultrathin AlxGa1-xAs barriers has been studied experimentally. It i s shown that an AlAs layer 1 monolayer thick constitutes a barrier for GaAs phonons, while an AlxGa1-xAs layer with x less-than-or-equal-to 0.5 is penetrable.