BEAM PROFILE AND EMITTANCE MEASUREMENTS FOR ION-IMPLANTATION

For ion implantation the current density distribution of the beam is a n important quantity, since it determines strongly the homogeneity of the implantation profiles. In our experiment the beam profile is measu red by a grid and can be monitored during implantation. More informati on, as intrinsic and total beam angle, can be achieved by using an emi ttance measurement device. In our device the emittance is measured in combination with mass separation, which yields additional information concerning the beam composition and the beam parameters of each compon ent. The beam diagnostic equipment is discussed. Results on beam measu rements at an implantation device, which consists of an ion source equ ipped with a pentode extraction system, are presented.