ANALYSIS OF BORON-DOPED AMORPHOUS-SILICON BY MEANS OF A HEAVY-ION TIME-OF-FLIGHT ERD SPECTROMETER

Authors
ARAI E ZOUNEK A SEKINO N SAITO K
Citation
E. Arai et al., ANALYSIS OF BORON-DOPED AMORPHOUS-SILICON BY MEANS OF A HEAVY-ION TIME-OF-FLIGHT ERD SPECTROMETER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 149-152
Citations number
23
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
89
Issue
1-4
Year of publication
1994
Pages
149 - 152
Database
ISI
SICI code
0168-583X(1994)89:1-4<149:AOBABM>2.0.ZU;2-V
Abstract
The heavy-ion time-of-flight (hereafter TOF) elastic recoil detection (ERD) is a powerful method to profile simultaneously all constituent c hemical elements of a sample. We have analyzed boron-doped amorphous s ilicon {a-Si(B)} films deposited on SiO2/Si substrates. The probe beam ConsistS of 13.6 MeV Cl-35(+7) ions accelerated by a small tandem. Th e mass of atoms scattered on or recoiled from the sample has been dete rmined from the simultaneous measurement of TOF and the kinetic energy of each registered particle.