INVESTIGATION OF SILICON WIDTH (P, P') RESONANCE SCATTERING IN (110) CHANNELING DIRECTION

Authors
DITROI F MEYER JD MICHELMANN R KISLAT D BETHGE K
Citation
F. Ditroi et al., INVESTIGATION OF SILICON WIDTH (P, P') RESONANCE SCATTERING IN (110) CHANNELING DIRECTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 164-167
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
89
Issue
1-4
Year of publication
1994
Pages
164 - 167
Database
ISI
SICI code
0168-583X(1994)89:1-4<164:IOSW(P>2.0.ZU;2-G
Abstract
Crystalline silicon samples were investigated both in channeling and r andom directions by using the (p, p') resonance scattering at 2.3 MeV bombarding energy. The samples were positioned in the scattering chamb er of a VdG accelerator after 2 m collimating path. The peaks due to t he resonance at 2.1 MeV were measured at different angles in the vicin ity of the channeling and random directions. A peak shift and broadeni ng was seen at the channeling and near channeling directions compared with the random one. The spectra were also simulated using our modifie d Monte Carlo calculation method for stopping, range and energy distri bution in highly ordered materials. The energy shift and the broadenin g between the random and the channeling spectra were compared and expl ained.