COMPARISON OF MEV-IMPLANTED GAAS AND INP

Authors
BACHMANN T SCHIPPEL S WENDLER E WESCH W RICHTER U WITTHUHN W
Citation
T. Bachmann et al., COMPARISON OF MEV-IMPLANTED GAAS AND INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 168-173
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
89
Issue
1-4
Year of publication
1994
Pages
168 - 173
Database
ISI
SICI code
0168-583X(1994)89:1-4<168:COMGAI>2.0.ZU;2-8
Abstract
GaAs and InP crystals were implanted with 1.6 MeV Ar+ and 2.0 MeV Se2 ions in the dose range of 1 X 10(12) cm-2 Up to 3 X 10(15) cm-2 at ro om temperature. The investigation of the resulting damage after implan tation by means of Rutherford backscatttering spectrometry shows that the same amount of nuclear energy deposition leads to different damage in the two materials for the two ion species. In GaAs pronounced self -annealing occurs which is different for the different depth regions o f the implanted layer. Part of the samples were short time annealed an d show an activation of 40% and high mobilities in the low ion fluence region.