D. Raiser et al., DIFFUSION PARAMETERS AT THE PT-CO INTERFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 183-185
Rutherford backscattering analysis of the interface of Pt films deposi
ted on polycrystalline Co substrates and annealed for various duration
s and temperatures between 50-degrees and 700-degrees-C has given the
values for the diffusion coefficients of Pt in Co and the composition
of the alloys obtained. From the coefficients obtained at temperatures
between 50-degrees and 200-degrees-C, where the interface is well-def
ined, the activation energy Q and the frequency factor D0 have been de
duced for the Pt-Co diffusion: Q = 0.102 +/- 0.015 eV/at and D0 = (0.5
1 +/- 0.24) X 10(-15) cm2/s. The composition of alloys obtained at hig
her temperatures is discussed.