ION-BEAM TECHNIQUES IN MICROELECTRONICS

Authors
SEALY BJ HEMMENT PLF
Citation
Bj. Sealy et Plf. Hemment, ION-BEAM TECHNIQUES IN MICROELECTRONICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 298-306
Citations number
47
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
89
Issue
1-4
Year of publication
1994
Pages
298 - 306
Database
ISI
SICI code
0168-583X(1994)89:1-4<298:ITIM>2.0.ZU;2-R
Abstract
The use of ion implantation for processing silicon devices and circuit s is reviewed. Topics covered include lateral doping by high angle imp lantation, shallow and deep junction formation, well engineering for C MOS devices, gettering and ion beam synthesis. Applications to III-V c ompounds and large area electronics are also included.