PREPARATION OF GE QUANTUM CRYSTALLITES EMBEDDED IN A-SINX MATRIX BY THE PECVD METHOD

Preparation of Ge quantum crystallites embedded in a-SiN(x) matrix was successfully achieved by the PECVD technique and followed thermal ann ealing treatment at 800-degrees-C. The microscopic heterogeneity of th e as-deposited and thermal-annealed films were, analyzed by the TEM an d X-ray diffraction. We have. found that substrate temperature is a cr itical parameter for the formation of Ge clusters. The temperature and time duration of annealing determine the size of Ge quantum crystalli tes. We are temporarily using the diffusion-limited growth model to ex plain the crystallization mechanism of this quantum material.