ELECTRONIC STATES OF INSE GASE SUPERLATTICE

Analysis of recent publications revealed an increasing interest in epi taxial growth of InSe/GaSe superlattice. Within the effective mass the ory we carried out self-consistent calculations of the confined and it inerant electronic states, potential profile and charge density distri bution of InSe/GaSe superlattice, where the InSe layers are the well a nd the GaSe layers the barrier. Calculations were performed for three types of doping: uniform, modulated in the well, and modulated in the barrier. It has been found that the Coulomb interaction in the well an d barrier forces the formation of localized states in the barrier regi on. The possibility of an insulator-metal transition in InSe/GaSe supe rlattice is predicted for modulation doping in the barrier and for a d oping level n = 10(19) cm-3. A decrease of the barrier height has been found for modulation doping in the well.