Thin epitaxial yttria-stabilized zirconia films were used as seed laye
rs to form bi-epitaxial 45-degrees crystallographic boundaries in YBa2
Cu3O7-delta, films on (110) NdGaO3 substrates. The crystallographic al
ignment of the seed layer on the substrate and three different in-plan
e orientations (0-degrees, 9-degrees and 45-degrees) of c-axis oriente
d YBa2Cu3O7-delta, films on the (100) plane of yttria-stabilized zirco
nia were analysed. The microwave and magnetic field responses of bi-ep
itaxial-based Josephson junctions were registered.