The use of high-temperature superconductors (HTSC) for device applicat
ion has made the compatibility of the film and substrate an important
concern. The quest for an ideal substrate material for the growth Of H
TSC films with excellent properties for device applications is an acti
ve area of research and needs further investigation. We have examined
garnet as a potential substrate material suitable for microwave applic
ations, and we compare its various physical properties with those of o
ther well-known substrate materials.