ELECTRICAL CHARACTERISTICS OF NEUTRON-IRRADIATION INDUCED DEFECTS IN N-GAAS

Authors
AURET FD WILSON A GOODMAN SA MYBURG G MEYER WE
Citation
Fd. Auret et al., ELECTRICAL CHARACTERISTICS OF NEUTRON-IRRADIATION INDUCED DEFECTS IN N-GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 387-391
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
90
Issue
1-4
Year of publication
1994
Pages
387 - 391
Database
ISI
SICI code
0168-583X(1994)90:1-4<387:ECONID>2.0.ZU;2-P
Abstract
Palladium Schottky barrier diodes (SBDs) on epitaxially grown n-GaAs w ere irradiated with neutrons from a reactor and a p(66)/Be (40) clinic al source. From current-voltage (I-V) and capacitance-voltage (C-V) me asurements it was found that neutron irradiation caused generation-rec ombination currents and resulted in a reduction in the free carrier co ncentrations of the epitaxial layers. A linear relation was found betw een the irradiation fluence, the free carrier removal and the reverse leakage current of neutron irradiated SBDs. Deep level transient spect roscopy (DLTS) indicated that five electron traps, En1-En5, were intro duced during neutron irradiation. These defects are shown to be respon sible for the degradation of neutron irradiated SBDs.