RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE/

Authors
XU TB ZHU PR ZHOU JS LI DQ GONG B WAN Y MU SM ZHAO QT WANG ZL
Citation
Tb. Xu et al., RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 392-395
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
90
Issue
1-4
Year of publication
1994
Pages
392 - 395
Database
ISI
SICI code
0168-583X(1994)90:1-4<392:RSOTLD>2.0.ZU;2-J
Abstract
The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlat tices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C h as been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large dens ity of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimate d to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8 Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 -degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.