DAMAGE ACCUMULATION AND AMORPHIZATION IN GAAS BY MEV SI-IMPLANTATION AT DIFFERENT TILT ANGLES( ION)

Authors
ZHAO QT WANG ZL XU TB ZHU PR ZHOU JS
Citation
Qt. Zhao et al., DAMAGE ACCUMULATION AND AMORPHIZATION IN GAAS BY MEV SI-IMPLANTATION AT DIFFERENT TILT ANGLES( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 415-418
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
90
Issue
1-4
Year of publication
1994
Pages
415 - 418
Database
ISI
SICI code
0168-583X(1994)90:1-4<415:DAAAIG>2.0.ZU;2-O
Abstract
Damage accumulation and amorphization in GaAs(100) by MeV Si+ ion impl antation at different tilt angles have been studied using the Rutherfo rd backscattering and channeling technique. It was found that the tota l amount of damage increases linearly with the implant dose at doses l ess than the threshold dose for amorphization. Layer by layer amorphiz ation was observed at doses higher than the, threshold dose. The damag e distribution is strongly influenced by the target tilt angle. With a n increase in the implant tilt angle, the damage level decreases. A mo del for the damage accumulation and amorphization is discussed.