DETERMINATION BY RAMAN-SCATTERING OF THE IN-DEPTH DAMAGE PROFILE IN HIGH-ENERGY ION-IMPLANTATION

Ion implanted GaAs samples have been chemically etched to form a small angle beveled surface. First order Raman spectroscopy has been perfor med along the bevel of as-implanted samples bombarded with 2.3 MeV Be and 10.9 MeV Se ions. The phonon confinement interpretation [H. Richte r et al., Solid State Commun. 39 (1981) 625] has been employed to fit the spectra and obtain the damage distributions. Comparisons with X-ra y diffraction (XRD) and RBS-channeling (RBS) measurements show good ag reement with regard to the basic shape and depth of the profiles. The Be-implanted sample shows a damaged layer at a depth of 2.5 to 4 mum w hile the Se implant shows a much wider damaged layer at a depth betwee n 1 and 3.5 mum.