ANALYSIS OF TESTING THE SINGLE-FLUXON DYNAMICS IN A LONG JOSEPHSON-JUNCTION BY A DISSIPATIVE SPOT

A change of the I-V characteristics of a long Josephson junction, oper ating in the zero-field single-fluxon regime, under the action of a '' hot spot'' (e.g., created by a focused electron beam) is calculated an alytically by means of the perturbation theory, and also investigated numerically. The change of the average voltage at a given value of the bias current is calculated as a function of the hot-spot position. Th e overlap Josephson junction geometry is considered in detail, while t he inline one is briefly discussed. A good accord between analytical a nd numerical results is found. The results are relevant for the interp retation of the low-temperature scanning electron microscopy experimen ts on imaging the fluxon dynamic states in a long Josephson junction.