SHALLOW P+N JUNCTION SILICON NUCLEAR RADIATION DETECTORS

Si planar technology and ion implantation were used for manufacturing shallow p+n junction nuclear radiation detectors. Their characteristic s were investigated as a function of alternative implantation steps wi th and without preamorphisation by Si (Si + B, Si + BF2, B, BF2). The influence of Ar implantation on the increase of the breakdown voltage was examined. The thickness of the insensitive entrance window (dead l ayer) was determined by the tilting method. A description of the detec tor manufacturing process, and results of the measured detector perfor mance (current/voltage characteristics, detector resolution, dead wind ow thickness) is presented and discussed.