NEW RESULTS ON OPTICAL PRESSURE SENSORS BASED ON SEMICONDUCTOR QUANTUM-WELLS

Authors
SOSIN TP PERLIN P TRZECIAKOWSKI W TOBER R ZARECKA R
Citation
Tp. Sosin et al., NEW RESULTS ON OPTICAL PRESSURE SENSORS BASED ON SEMICONDUCTOR QUANTUM-WELLS, Sensors and actuators. A, Physical, 42(1-3), 1994, pp. 654-657
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
42
Issue
1-3
Year of publication
1994
Pages
654 - 657
Database
ISI
SICI code
0924-4247(1994)42:1-3<654:NROOPS>2.0.ZU;2-0
Abstract
It is demonstrated that the interband absorption in InGaAs/GaAs quantu m wells can be used for accurate pressure calibration up to 5 GPa (at room temperature) and up to 4 GPa at 20 K. By depositing the GaAs or I nGaAs quantum-well layers on a thin (20-30 mum) GaAs diaphragm the eff ects of biaxial deformations on the quantum-well spectra can be studie d. This might be useful for the optical characterization of the strain fields in Si diaphragms used as piezoresistive low-pressure sensors.