DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

Authors
KATIRCIOGLU S ERKOC S
Citation
S. Katircioglu et S. Erkoc, DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE, Surface science, 311(1-2), 1994, pp. 120000682-120000686
Citations number
17
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
311
Issue
1-2
Year of publication
1994
Pages
120000682 - 120000686
Database
ISI
SICI code
0039-6028(1994)311:1-2<120000682:DORSOD>2.0.ZU;2-2
Abstract
The electronic structure of a uniformly and modulation-doped GaAs/Ga0. 75Al0.25As superlattice has been investigated by a self-consistent fie ld calculation within the effective mass approximation for three diffe rent doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.